NEXTRAL RIE NE 110 Reactive Ion Etcher

Technical Specifications:

Process: Reactive Ion Etching (RIE) for high-precision plasma etching.

Chamber: Vacuum etching chamber with a maximum internal diameter of 15 cm.

Electrode Configuration: * Bottom Cathode: Powered by a high-performance 1200W RF Generator (13.56 MHz).

Top Anode: Functions as the gas injection system for reactive process gases.

Gas Distribution: Equipped with 5 Mass Flow Controllers (MFC) for precise gas ratio management.

Vacuum System: High-vacuum setup including:

Alcatel primary backing pump.

Turbo-molecular pump (integrated directly under the chamber for maximum conductance).

Power: Dedicated 13.56 MHz Radio Frequency generator.

USED, IN GOOD VISUAL CONDITION, NOT TESTED.

Packing and preparation for shipment available upon request.